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Dual-Phase MOSFET Drivers
with Temperature Sensor
ABSOLUTE MAXIMUM RATINGS
V CC to AGND............................................................-0.3V to +6V
V DD to AGND............................................................-0.3V to +6V
PGND_ to AGND ...................................................-0.3V to +0.3V
SKIP , SHDN , DRHOT , TSET to AGND......................-0.3V to +6V
PWM_ to AGND ........................................................-0.3V to +6V
DL_ to PGND_ ............................................-0.3V to (V DD + 0.3V)
LX_ to AGND .............................................................-2V to +30V
DH_ to LX_ ...............................................-0.3V to (V BST_ + 0.3V)
BST_ to LX_ ..............................................................-0.3V to +6V
Continuous Power Dissipation (T A = +70°C)
20-Pin 4mm x 4mm Thin QFN
(derate 16.9mW/ ° C above +70°C) .............................1349mW
Operating Temperature Range .........................-40°C to +100°C
Junction Temperature ......................................................+150°C
Storage Temperature Range .............................-65°C to +150°C
Lead Temperature (soldering, 10s) .................................+300°C
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional
operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to
absolute maximum rating conditions for extended periods may affect device reliability.
ELECTRICAL CHARACTERISTICS
(Circuit of Figure 2. V CC = V DD = V SHDN = V SKIP = 5V, T A = 0°C to +85°C . Typical values are at T A = +25°C, unless otherwise noted.)
PARAMETER
Input Voltage Range
SYMBOL
V CC
CONDITIONS
MIN
4.5
TYP
MAX
5.5
UNITS
V
V CC Undervoltage-Lockout
Threshold
V UVLO
85mV typical
hysteresis
V CC rising
V CC falling
3.4
3.3
3.85
3.75
4.1
4.0
V
V CC Quiescent Current
(Note 1)
V DD Quiescent Current
V CC Shutdown Current
V DD Shutdown Current
I CC
I DD
SKIP = AGND, PWM_ = AGND
SKIP = AGND, PWM_ = V CC
SKIP = AGND, PWM_ = AGND
SHDN = SKIP = AGND
SHDN = SKIP = AGND
200
2
1
2
1
400
3
5
5
5
μA
mA
μA
μA
μA
GATE DRIVERS AND DEAD-TIME CONTROL (Figure 1)
DL_ Propagation Delay
DH_ Propagation Delay
DL_ Transition Time
DH_ Transition Time
t PWM-DL
t DH-DL
t DL-DH
t PWM-DH
t F _ DL
t R _ DL
t F _ DH
t R _ DH
PWM_ high to DL_ low
DH_ low to DL_ high
DL_ low to DH_ high
PWM_ low to DH_ low
DL_ falling, 3nF load
DL_ rising, 3nF load
DH_ falling, 3nF load
DH_ rising, 3nF load
19
36
25
23
11
8
14
16
ns
ns
ns
ns
DH_ On-Resistance (Note 2)
DL_ On-Resistance (Note 2)
DH_ Source/Sink Current
R DH
R DL _ HIGH
R DL _ LOW
I DH
V BST _ - V LX _ = 5V
High state (pullup)
Low state (pulldown)
V DH _ = 2.5V, V BST _ - V LX _ = 5V
1.0
1.0
0.35
1.5
4.5
4.5
2.0
?
?
A
DL_ Source Current
I DL _ SOURCE V DL _ = 2.5V
1.5
A
DL_ Sink Current
Zero-Crossing Threshold
I DL _ SINK
V DL _ = 5V
V PGND _ - V LX _, SKIP = AGND
5
2.5
A
mV
TEMPERATURE SENSOR
Temperature Threshold
Accuracy
DRHOT Output Low Voltage
DRHOT Leakage Current
T A = +85 ° C to +125 ° C, 10 ° C falling hysteresis
I SINK = 3mA
High state, V DRHOT = 5.5V
-5
+5
0.4
1
° C
V
μA
2
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